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  r07ds1226ej0300 rev.3.00 page 1 of 6 jul 31, 2014 preliminary datasheet bcr08am-14a 700v-0.8a-triac low power use features ? i t (rms) : 0.8 a ? v drm :700 v ? i fgti , i rgti , i rgtiii : 5 ma ? non-insulated type ? planar passivation type outline 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal renesas package code: prss0003ea-a (package name: to-92*) 1 2 3 applications washing machine, electric fan, air purifi er, electric pot, rice-cooker, electric bla nket, refrigerator, solid state relay, and other general purpose ac control applications maximum ratings parameter symbol voltage class unit 14 repetitive peak off-state voltage note1 v drm 700 v non- repetitive peak off-state voltage note1 v dsm 840 v notes: 1. gate open. parameter symbol ratings unit conditions rms on-state current i t (rms) 0.8 a commercial frequency, sine full wave 360 conduction, tc = 67 c surge on-state current i tsm 8 a 60 hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 0.26 a 2 s value corresponding to 1 cycle of half wave 60 hz, surge on-state current peak gate power dissipation p gm 1 w average gate power dissipation p g (av) 0.1 w peak gate voltage v gm 6 v peak gate current i gm 0.5 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 0.23 g typical value notes: 1. gate open. r07ds1226ej0300 rev.3.00 jul 31, 2014
bcr08am-14a preliminary r07ds1226ej0300 rev.3.00 page 2 of 6 jul 31, 2014 electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 1.0 ma tj = 125 c, v drm applied on-state voltage v tm ? ? 2.0 v tc = 25 c, i tm = 1.2 a, instantaneous measurement gate trigger voltage note2 v fgt ? ? 2.0 v tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? v rgt ? ? 2.0 v ?? v rgt ?? ? ? 2.0 v gate trigger current note2 i fgt ? ? 5 ma tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? i rgt ? ? 5 ma ?? i rgt ?? ? ? 5 ma gate non-trigger voltage v gd 0.1 ? ? v tj = 125 c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 50 c/w junction to case note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 0.5 ? ? v/ s tj = 125 c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. case temperature is measured at the t 2 terminal 1.5 mm away from the molded case. 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c 2. rate of decay of on-state commutating current (di/dt)c = ? 0.4 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt) c v d (dv/dt) c
bcr08am-14a preliminary r07ds1226ej0300 rev.3.00 page 3 of 6 jul 31, 2014 performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 t c = 25 c 10 0 23 5710 1 4 2 23 5710 2 6 8 10 3 1 5 7 9 0 10 0 23 310 1 57 5710 2 23 5 710 3 3 2 10 1 7 5 3 2 7 5 7 5 3 3 2 10 ?1 v gd = 0.1v p gm = 1w v gm = 6v v gt i gm = 0.5a p g(av) = 0.1w 2 10 ?1 510 0 32323 57 710 1 5710 2 22323 10 2 5 5 37 710 4 710 5 10 3 5 10 1 10 3 7 5 3 2 ?60 ?20 20 10 2 7 5 3 2 10 1 7 5 3 2 3 2 10 2 7 5 3 60 100 140 ?40 0 40 80 120 10 1 10 3 7 5 3 2 ?60 ?20 20 10 2 7 5 3 2 60 100 140 ?40 0 40 80 120 i fgt i, i rgt i, i rgt iii gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) typical example typical example maximum transient thermal impedance characteristics (junction to case, junction to ambient) transient thermal impedance ( c/w) conduction time (cycles at 60hz) junction to ambient junction to case gate characteristics 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage (t j = t c) gate trigger voltage (t j = 25 c)
bcr08am-14a preliminary r07ds1226ej0300 rev.3.00 page 4 of 6 jul 31, 2014 160 120 80 40 140 100 60 20 0 1.0 0 0.2 0.1 0.3 0.5 0.7 0.9 0.4 0.6 0.8 2.0 1.6 1.2 0.8 0.4 1.8 1.4 1.0 0.6 0.2 0 1.4 00.4 0.2 0.6 0.8 1.0 1.2 maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) curves apply regardless of conduction angle 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads 140 40 ?40 ?60 ?20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 10 3 7 5 3 2 ?60 ?20 20 10 2 7 5 3 2 60 100 140 ?40 0 40 80 120 10 1 160 120 100 60 20 0 0 0.2 0.1 0.3 0.5 0.7 0.9 0.4 0.6 0.8 1.0 40 80 140 160 ?40 0 40 80 120 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 laching current vs. junction temperature laching current (ma) junction temperature ( c) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature ( c) holding current vs. junction temperature. junction temperature ( c) 100 (%) holding current (tj = t c) holding current (tj = 25 c) typical example typical example t 2 + , g ? typical example distribution t 2 ? , g ? typical example t 2 + , g + typical example curves apply regardless of conduction angle natural convection no fins 100 (%) repetitive peak off-state current (tj = t c) repetitive peak off-state current (tj = 25 c) 360 conduction resistive, inductive loads
bcr08am-14a preliminary r07ds1226ej0300 rev.3.00 page 5 of 6 jul 31, 2014 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 20 40 60 80 100 140 160 160 100 80 40 20 0 140 40 ?40 ?60 ?20 0 20 60 80 140 100120 60 120 breakover voltage vs. junction temperature junction temperature ( c) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage ( v/ s) 100 (%) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) typical example i quadrant iii quadrant 100 (%) breakover voltage (tj = t c) breakover voltage (tj = 25 c) typical example tj = 125 c 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 i rgt iii i fgt i i rgt i 10 ?1 23 5710 0 10 0 7 5 3 2 23 5710 1 10 1 7 5 3 2 10 ?1 6 6 6 6v 6v 6v r g r g r g a v a v a v test procedure i test procedure iii test procedure ii gate trigger characteristics test circuits commutation characteristics critical rate of rise of off-state commutating voltage ( v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current (tw) gate trigger current (dc) i rgt iii typical example conditions v d = 200v i t = 1a = 500 s tj = 125 c typical example i quadrant iii quadrant minimum characteristics value
bcr08am-14a preliminary r07ds1226ej0300 rev.3.00 page 6 of 6 jul 31, 2014 package dimensions sc -4 3a 0 . 23g mass [t yp .] ? prss0003 e a - a r ene sas code j eit a package code prev i ous code u n i t : mm 5 . 0max 4.4 3 . 6 11 . 5m i n5 . 0max 1 . 25 c i rcumscr i bed c i rc l e 0 . 7 1 . 25 1 . 1 package n ame t o - 92 * ordering information orderable part number packing note5 quantity remark quality grade note7 bcr08am-14a#b00 plastic bag 500 pcs. straight type general industrial & consumer use bcr08am-14a-a6#b00 plastic bag 500 pcs. a6 lead form general industrial & consumer use bcr08am-14a-tb#b00 adhesive tape 2000 pcs. a8 lead form general industrial & consumer use bcr08am-14a#fd0 plastic bag 1000 pcs. straight type special consumer use note6 bcr08am-14a-a6#fd0 plastic bag 1000 pcs. a6 lead form special consumer use note6 notes: 5. please confirm the specification about t he shipping in detail. 6. ?special consumer use? grade product is not tested for the ?temperature humidity bias? reliability in the condition of rated v drm . please be sure to implement qualificati on tests and judge whether the product meets your criteria. if necessary, please apply moisture-p roof measures according to user?s conditions. 7. for further details about the classification in the standard quality grade, please refer to the application note.
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2801 scott boulevard santa clara, ca 95050-2549, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, no.27 zhichunlu haidian district, beijing 100191, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 301, tower a, central towers, 555 langao road, putuo district, shanghai, p. r. china 200333 tel: +86-21-2226-0888, fax: +86-21-2226-0999 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2265-6688, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei 10543, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre, singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 12f., 234 teheran-ro, gangnam-ku, seoul, 135-920, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2014 renesas electronics corporation. all rights reserved. colophon 4.0


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